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| PHD20N06T N-channel TrenchMOSTM transistor Rev. 01 -- 22 February 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHD20N06T in SOT428 (D-PAK). 2. Features s TrenchMOSTM technology s Low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters s General purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 MBB076 d g s SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS = 10 V Tmb = 25 C VGS = 10 V; ID = 10 A Tj = 25 C Tj = 175 C 65 - 77 154 Typ - - - - Max 55 18 51 175 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter m m 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 6 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting T j = 25 C Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 RGS = 20 k Conditions Min - - - - - [1] - - -55 -55 - - - Max 55 55 20 18 13 73 51 +175 +175 18 73 36 Unit V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness [1] IDM is limited by chip, not package. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 2 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 120 Pder (%) 03aa16 03aa24 120 Ider (%) 100 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) 0 0 25 50 75 100 125 150 175 200 Tmb (oC) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 4.5 V ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. 103 ID (A) Fig 2. Normalized continuous drain current as a function of mounting base temperature. !==="! 102 RDSon = VDS/ ID tp = 10 us 10 P 100 us = tp T D.C. 1 ms 10 ms 1 tp t T 10-1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 3 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 7. Thermal characteristics Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions minimum footprint, FR4 board Value 71.4 2.9 Unit K/W K/W thermal resistance from junction to mounting Figure 4 base 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) = 0.5 1 0.2 003aaa053 0.1 0.05 10-1 P 0.02 = tp T Single pulse tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 4 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 10 A; Figure 7 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain lead from package to centre of die measured from source lead from package to source bond pad VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 ; VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 ID = 25 A; VDD = 44 V; VGS = 10 V; Figure 14 - - - - - - - - - - - - 11 3 6 316 92 64 10 50 70 40 2.5 7.5 - - - 422 110 87 - - - - - - nC nC nC pF pF pF ns ns ns ns nH nH - - 65 - 77 154 m m - - - 0.05 - 2 10 500 100 A A nA 2 1 - 3 - - 4 - 4.4 V V V 55 50 - - - - V V Min Typ Max Unit Static characteristics 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 5 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 10 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V Min - - - Typ 0.85 32 120 Max 1.2 - - Unit V ns nC Source-drain diode 60 ID (A) !==="# 160 VGS (V) = 16 12 10 9.0 !===# 50 RDSon (m) 140 40 120 30 8.0 7.5 7.0 6.5 6.0 5.0 100 20 80 10 60 0 0 2 4 6 8 10 VDS (V) 40 5 10 15 VGS (V) 20 Tj = 25 C Tj = 25 C; ID = 10 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 2.2 a 03aa28 180 RDSon (m) 160 140 120 100 80 60 40 0 003aaa046 VGS (V) = 5.5 6 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 6.5 7 8 10 10 20 30 40 ID (A) 50 -60 -20 20 60 100 140 180 o Tj ( C) Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 6 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 5 VGS(th) (V) 03aa32 10-1 ID (A) 03aa35 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 140 Tj (oC) 180 min typ. max. 10-2 10-3 min 10-4 typ max 10-5 10-6 0 1 2 3 4 VGS (V) 5 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 8 gfs (S) !==="% Fig 10. Sub-threshold drain current as a function of gate-source voltage. !==="& 600 Ciss, Coss, Crss 500 (pF) 400 6 Ciss 4 300 200 2 Coss 100 Crss 0 0 5 10 15 20 ID (A) 25 0 10-3 10-2 1 10 VDS (V) 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 7 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 25 ID (A) !==="' 10 VGS !===# 20 (V) VDD = 44 V 8 VDD = 14 V 15 6 10 4 5 Tj = 175 oC Tj = 25 oC 2 0 0 2 4 6 8 10 VGS (V) 0 0 5 10 QG (nC) 15 VDS = 25 V Tj = 25 C; ID = 10 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 120 IS (A) 100 Fig 14. Gate-source voltage as a function of gate charge; typical values. !===# 80 60 Tj = 175 oC Tj = 25 oC 40 20 0 0 0.5 1.0 1.5 VSD (V) 2.0 VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 8 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 D1 E1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2 2.285 4.57 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 EIAJ SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13 Fig 16. SOT428 (D-PAK). 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 9 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 10. Revision history Table 6: 01 Revision history CPCN Description Product specification; initial version. Rev Date 20010222 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 10 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor 11. Data sheet status Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 07895 (c) Philips Electronics N.V. 2001 All rights reserved. Product specification Rev. 01 -- 22 February 2001 11 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA71) 9397 750 07895 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 22 February 2001 12 of 13 Philips Semiconductors PHD20N06T N-channel TrenchMOSTM transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 February 2001 Document order number: 9397 750 07895 |
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